New PDF release: Analog BiCMOS Design: Practices and Pitfalls

By James C. Daly, Denis P. Galipeau

ISBN-10: 0849302471

ISBN-13: 9780849302473

Built-in circuits (ICs) don't consistently paintings the 1st time. many stuff can and do get it wrong in analog circuit designs. there are many universal blunders that regularly require high priced chip redecorate and refabrication, all of which are kept away from whilst designers are conscious of the pitfalls. to gain luck, IC designers desire a whole toolbox-a toolbox stuffed not just with a pretty good history in electronics, layout recommendations and research talents, but additionally with the main invaluable instrument of all: event.

Analog BiCMOS layout deals IC layout engineers the educational similar to a long time of sensible adventure. Culled from the careers of working towards engineers, it provides the simplest equipment and the pitfalls most often encountered within the layout of biCMOS built-in circuits. available to somebody who has taken a direction in electronics, this e-book covers the elemental layout of bandgap voltage references, present mirrors, amplifiers, and comparators. It stories universal layout error frequently missed and gives layout recommendations used to treatment these problems.

With its whole insurance of uncomplicated circuit development blocks, complete information of universal layout pitfalls, and a compendium of layout and structure difficulties and ideas, Analog BiCMOS layout is the best reference for IC designers and engineers, fledgling and skilled alike. learn it to augment your historical past, browse it for ideas on averting pitfalls, and should you run right into a challenge, use it to discover a solution.

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Extra info for Analog BiCMOS Design: Practices and Pitfalls

Sample text

Since collector current varies inversely with base width, collector current increases. 7. It ignores high order effects, but it is useful for hand calculations. The model is characterized by four parameters gm gmb , ro , and Ccs . 29) where KP = µn COX is the transconductance parameter, W and L are the transistor width and length, Vth is the threshold voltage, µn is the electron mobility, and COX is the gate to channel capacitance per unit area. 7. It accounts for the effect of the body voltage on the drain current.

19 Current flow in the n-type epitaxial region is restricted by the depletion region associated with the base-epi pn junction. Sheet resistance of the epiFET can be significantly higher than the epi sheet resistance. 19, in the lightly doped ntype epitaxial layer(epi) forms a junction field effect transistor(JFET). Current flowing in the epi is modulated by voltages on the P-type base diffusion acting as the JFET gate. The depletion region associated with the base-epi pn junction increases in size as the gate becomes more negative relative to the epi.

They can be physical or empirical. Physical models are based on device physics and can be related to physical properties. Empirical models fit measurements to mathematical descriptions that do not necessarily correspond to device physics. Physical models are easier to adapt when parameters such as doping levels or device dimensions change. Modeling is a tradeoff between accuracy and utility. Exact models tend to be more complex than approximate ones. The model to use is the simplist one that provides the required accuracy.

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Analog BiCMOS Design: Practices and Pitfalls by James C. Daly, Denis P. Galipeau

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